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TJ9A10M3
Power MOSFET (P-ch single)
产品概要
| Application Scope | Switching Voltage Regulators |
|---|---|
| Polarity | P-ch |
| Generation | U-MOSⅥ |
| Internal Connection | Single |
| RoHS Compatible Product(s) (#) | Available |
| Assembly bases | 马来西亚 |
封装类型
| Toshiba Package Name | TO-220SIS |
|---|---|
| Package Image | |
| JEITA | SC-67 |
| Pins | 3 |
| Mounting | Through Hole |
| Package Dimensions | 查看 |
Please refer to the link destination to check the detailed size.
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source voltage | VDSS | -100 | V |
| Gate-Source voltage | VGSS | +/-20 | V |
| Drain current | ID | -9.0 | A |
| Power Dissipation | PD | 19 | W |
产品特性
| 项目 | 符号 | 条件 | 数值 | 单位 |
|---|---|---|---|---|
| Gate threshold voltage (Max) | Vth | - | -4.0 | V |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 170 | mΩ |
| Input capacitance (Typ.) | Ciss | - | 2900 | pF |
| Total gate charge (Typ.) | Qg | VGS=-10V | 47 | nC |